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SI4816BDY-T1-GE3
Dual MOSFET, N Channel + Schottky, 30 V, 30 V, 5.8 A, 5.8 A, 0.0155 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4816BDY-T1-GE3
Order Code2101479RL
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 100+ | NT$33.790 |
| 500+ | NT$32.040 |
| 1000+ | NT$30.290 |
| 5000+ | NT$28.580 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
NT$3,379.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4816BDY-T1-GE3
Order Code2101479RL
Technical Datasheet
Transistor PolarityN Channel + Schottky
Channel TypeN Channel + Schottky
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id5.8A
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel5.8A
On Resistance Rds(on)0.0155ohm
Continuous Drain Current Id P Channel5.8A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0155ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.0155ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max3V
No. of Pins8Pins
Power Dissipation Pd1.25W
Power Dissipation N Channel1.25W
Power Dissipation P Channel1.25W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI4816BDY-T1-GE3 is a dual N-channel MOSFET with Schottky diode housed in a surface-mount package.
- Halogen-free
- LITTLE FOOT® Plus power MOSFET
- 100% Rg tested
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel + Schottky
Drain Source Voltage Vds
30V
Continuous Drain Current Id
5.8A
Continuous Drain Current Id N Channel
5.8A
Continuous Drain Current Id P Channel
5.8A
Drain Source On State Resistance N Channel
0.0155ohm
Drain Source On State Resistance P Channel
0.0155ohm
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
1.25W
Power Dissipation P Channel
1.25W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel + Schottky
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.0155ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
1.25W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000301