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SI5513CDC-T1-GE3
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 4 A, 4 A, 0.045 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI5513CDC-T1-GE3
Order Code3772765RL
Product RangeTrench Series
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 100+ | NT$11.680 |
| 500+ | NT$8.970 |
| 1000+ | NT$8.130 |
| 5000+ | NT$7.280 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
NT$1,168.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI5513CDC-T1-GE3
Order Code3772765RL
Product RangeTrench Series
Technical Datasheet
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id4A
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel4A
On Resistance Rds(on)0.045ohm
Continuous Drain Current Id P Channel4A
Drain Source On State Resistance N Channel0.045ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.045ohm
Rds(on) Test Voltage4.5V
Transistor Case StyleChipFET
Gate Source Threshold Voltage Max600mV
Power Dissipation Pd3.1W
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product RangeTrench Series
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
4A
Continuous Drain Current Id N Channel
4A
Continuous Drain Current Id P Channel
4A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
600mV
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Product Range
Trench Series
Automotive Qualification Standard
-
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
On Resistance Rds(on)
0.045ohm
Drain Source On State Resistance N Channel
0.045ohm
Drain Source On State Resistance P Channel
0.045ohm
Transistor Case Style
ChipFET
Power Dissipation Pd
3.1W
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001