Print Page
SIA527DJ-T1-GE3
Dual MOSFET, N and P Channel, 12 V, 12 V, 4.5 A, 4.5 A, 0.024 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIA527DJ-T1-GE3Copy
Manufacturer Standard Lead Time56 weeks
Order Code
Re-Reel3772807RL
Cut Tape3772807
Product RangeTrenchFET Series
Your Part Number
6,820 In Stock
Need more?
6,820 Delivery in 3-4 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Re-Reel | 5 | NT$28.600 | NT$143.00 |
| Total Price | NT$143.00 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | NT$28.600 |
| 10+ | NT$17.760 |
| 100+ | NT$11.480 |
| 500+ | NT$8.780 |
| 1000+ | NT$6.780 |
| 5000+ | NT$5.690 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA527DJ-T1-GE3Copy
Manufacturer Standard Lead Time56 weeks
Order Code
Re-Reel3772807RL
Cut Tape3772807
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityN and P Channel
Channel TypeN and P Channel
Drain Source Voltage Vds12V
Drain Source Voltage Vds N Channel12V
Continuous Drain Current Id4.5A
Drain Source Voltage Vds P Channel12V
On Resistance Rds(on)0.024ohm
Continuous Drain Current Id N Channel4.5A
Continuous Drain Current Id P Channel4.5A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.024ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.024ohm
Gate Source Threshold Voltage Max1V
Transistor Case StylePowerPAK SC-70
No. of Pins6Pins
Power Dissipation Pd7.8W
Power Dissipation N Channel7.8W
Power Dissipation P Channel7.8W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Transistor Polarity
N and P Channel
Drain Source Voltage Vds
12V
Continuous Drain Current Id
4.5A
On Resistance Rds(on)
0.024ohm
Continuous Drain Current Id P Channel
4.5A
Drain Source On State Resistance N Channel
0.024ohm
Drain Source On State Resistance P Channel
0.024ohm
Transistor Case Style
PowerPAK SC-70
Power Dissipation Pd
7.8W
Power Dissipation P Channel
7.8W
Product Range
TrenchFET Series
Automotive Qualification Standard
-
Channel Type
N and P Channel
Drain Source Voltage Vds N Channel
12V
Drain Source Voltage Vds P Channel
12V
Continuous Drain Current Id N Channel
4.5A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1V
No. of Pins
6Pins
Power Dissipation N Channel
7.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Alternatives for SIA527DJ-T1-GE3
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001