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SIHB21N80AE-T5-GE3
Power MOSFET, N Channel, 800 V, 17.4 A, 0.235 ohm, TO-263 (D2PAK), Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | NT$107.250 |
| 10+ | NT$77.460 |
| 100+ | NT$62.180 |
| 500+ | NT$56.550 |
| 1000+ | NT$53.540 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
NT$107.25
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHB21N80AE-T5-GE3
Order Code4825535
Product RangeE Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id17.4A
Drain Source On State Resistance0.235ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation179W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE Series
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
17.4A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
179W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
800V
Drain Source On State Resistance
0.235ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
E Series
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001