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SISS32ADN-T1-BE3
Power MOSFET, N Channel, 80 V, 63 A, 7300 µohm, PowerPAK 1212-S, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | NT$79.180 |
| 10+ | NT$52.360 |
| 100+ | NT$44.640 |
| 500+ | NT$36.210 |
| 1000+ | NT$32.370 |
| 5000+ | NT$30.470 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
NT$79.18
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS32ADN-T1-BE3Copy
Order Code5107930
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id63A
Drain Source On State Resistance7300µohm
Transistor Case StylePowerPAK 1212-S
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.6V
Power Dissipation65.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
63A
Transistor Case Style
PowerPAK 1212-S
Rds(on) Test Voltage
10V
Power Dissipation
65.7W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
80V
Drain Source On State Resistance
7300µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.6V
No. of Pins
8Pins
Product Range
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001