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SIZF914DT-T1-GE3
Dual MOSFET, N Channel + Schottky, 25 V, 25 V, 60 A, 60 A, 600 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIZF914DT-T1-GE3
Order Code2932985RL
Product RangeTrenchFET Gen IV SkyFET Series
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 56 week(s)
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| Quantity | Price |
|---|---|
| 100+ | NT$33.820 |
| 500+ | NT$28.170 |
| 1000+ | NT$26.880 |
| 5000+ | NT$25.590 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
NT$3,382.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZF914DT-T1-GE3
Order Code2932985RL
Product RangeTrenchFET Gen IV SkyFET Series
Technical Datasheet
Transistor PolarityN Channel + Schottky
Channel TypeN Channel + Schottky
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds25V
Continuous Drain Current Id60A
Drain Source Voltage Vds P Channel25V
Continuous Drain Current Id N Channel60A
On Resistance Rds(on)600µohm
Continuous Drain Current Id P Channel60A
Drain Source On State Resistance N Channel600µohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel600µohm
Rds(on) Test Voltage10V
Transistor Case StylePowerPAIR
Gate Source Threshold Voltage Max2.2V
No. of Pins8Pins
Power Dissipation Pd60W
Power Dissipation N Channel60W
Power Dissipation P Channel60W
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV SkyFET Series
Qualification-
Automotive Qualification Standard-
SVHCLead (07-Nov-2024)
Technical Specifications
Transistor Polarity
N Channel + Schottky
Drain Source Voltage Vds N Channel
25V
Continuous Drain Current Id
60A
Continuous Drain Current Id N Channel
60A
Continuous Drain Current Id P Channel
60A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.2V
Power Dissipation Pd
60W
Power Dissipation P Channel
60W
Product Range
TrenchFET Gen IV SkyFET Series
Automotive Qualification Standard
-
SVHC
Lead (07-Nov-2024)
Channel Type
N Channel + Schottky
Drain Source Voltage Vds
25V
Drain Source Voltage Vds P Channel
25V
On Resistance Rds(on)
600µohm
Drain Source On State Resistance N Channel
600µohm
Drain Source On State Resistance P Channel
600µohm
Transistor Case Style
PowerPAIR
No. of Pins
8Pins
Power Dissipation N Channel
60W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003