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SQ1922AEEH-T1_GE3
Dual MOSFET, N Channel, 20 V, 20 V, 850 mA, 850 mA, 0.21 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQ1922AEEH-T1_GE3
Order Code3104164RL
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
6,881 In Stock
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2811 Delivery in 1-2 Business Days(SG stock)
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| Quantity | Price |
|---|---|
| 100+ | NT$9.350 |
| 500+ | NT$7.150 |
| 1000+ | NT$5.370 |
| 5000+ | NT$4.350 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
NT$935.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ1922AEEH-T1_GE3
Order Code3104164RL
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id850mA
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel850mA
On Resistance Rds(on)0.21ohm
Continuous Drain Current Id P Channel850mA
Drain Source On State Resistance N Channel0.21ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.21ohm
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max2V
No. of Pins6Pins
Power Dissipation Pd1.5W
Power Dissipation N Channel1.5W
Power Dissipation P Channel1.5W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCLead (07-Nov-2024)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
850mA
Continuous Drain Current Id N Channel
850mA
Continuous Drain Current Id P Channel
850mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.21ohm
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
1.5W
Power Dissipation P Channel
1.5W
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
SVHC
Lead (07-Nov-2024)
Channel Type
N Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
On Resistance Rds(on)
0.21ohm
Drain Source On State Resistance N Channel
0.21ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-363
No. of Pins
6Pins
Power Dissipation N Channel
1.5W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.009