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SQ9945BEY-T1_GE3
Dual MOSFET, N Channel, 60 V, 60 V, 6 A, 6 A, 0.045 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQ9945BEY-T1_GE3
Order Code3470710RL
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 100+ | NT$25.860 |
| 500+ | NT$20.360 |
| 1000+ | NT$18.590 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
NT$2,586.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ9945BEY-T1_GE3
Order Code3470710RL
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id6A
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel6A
On Resistance Rds(on)0.045ohm
Continuous Drain Current Id P Channel6A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.045ohm
Drain Source On State Resistance P Channel0.045ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max2V
Power Dissipation Pd4W
No. of Pins8Pins
Power Dissipation N Channel4W
Power Dissipation P Channel4W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
6A
Continuous Drain Current Id N Channel
6A
Continuous Drain Current Id P Channel
6A
Drain Source On State Resistance N Channel
0.045ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Power Dissipation P Channel
4W
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
On Resistance Rds(on)
0.045ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.045ohm
Transistor Case Style
SOIC
Power Dissipation Pd
4W
Power Dissipation N Channel
4W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000907