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SQJ204EP-T1_GE3
Dual MOSFET, N Channel, 12 V, 12 V, 60 A, 60 A, 2460 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQJ204EP-T1_GE3
Order Code3019152RL
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 26 week(s)
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| Quantity | Price |
|---|---|
| 100+ | NT$28.660 |
| 500+ | NT$22.770 |
| 1000+ | NT$20.340 |
| 5000+ | NT$17.900 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
NT$2,866.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQJ204EP-T1_GE3
Order Code3019152RL
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel12V
Drain Source Voltage Vds12V
Continuous Drain Current Id60A
Drain Source Voltage Vds P Channel12V
Continuous Drain Current Id N Channel60A
On Resistance Rds(on)0.00246ohm
Continuous Drain Current Id P Channel60A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel2460µohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel2460µohm
Gate Source Threshold Voltage Max1V
Transistor Case StylePowerPAK SO
Power Dissipation Pd48W
No. of Pins8Pins
Power Dissipation N Channel48W
Power Dissipation P Channel48W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHC0
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
12V
Continuous Drain Current Id
60A
Continuous Drain Current Id N Channel
60A
Continuous Drain Current Id P Channel
60A
Drain Source On State Resistance N Channel
2460µohm
Drain Source On State Resistance P Channel
2460µohm
Transistor Case Style
PowerPAK SO
No. of Pins
8Pins
Power Dissipation P Channel
48W
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
SVHC
0
Channel Type
N Channel
Drain Source Voltage Vds
12V
Drain Source Voltage Vds P Channel
12V
On Resistance Rds(on)
0.00246ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
48W
Power Dissipation N Channel
48W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:0
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001