FDV304P

The FDV303P is a surface mount, P channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been tailored to minimize the onstate resistance and maintain low gate drive conditions. It has excellent on state resistance even at gate drive voltages as low as 2.5V. FDV303N is designed for battery power applications such as notebook, cellular phones and computers.

• Very low level gate drive requirements allowing direct operation in 3V circuits
• Drain to source voltage (Vds) of -25V
• Gate to source voltage of -8V
• Continuous drain current (Id) of -460mA
• Power dissipation (pd) of 350mW
• Low on state resistance of 1.22ohm at Vgs -2.7V
• Operating temperature range from -55°C to 150°C