列印頁面
G3R30MT12K
Silicon Carbide MOSFET, Single, N Channel, 90 A, 1.2 kV, 0.03 ohm, TO-247
圖片僅供舉例說明。 請參閱產品描述。
可供訂購
製造商標準交貨時間：7 週
有貨時通知我
| 數量 | 價格 |
|---|---|
| 1+ | NT$740.900 |
| 5+ | NT$723.840 |
| 10+ | NT$706.780 |
| 50+ | NT$689.720 |
| 100+ | NT$672.660 |
| 250+ | NT$655.600 |
價格Each
最少: 1
多項: 1
NT$740.90
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商GENESIC
製造商產品編號G3R30MT12K
訂購代碼3598641
Product RangeG3R
技術資料表
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id90A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.03ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max2.69V
Power Dissipation281W
Operating Temperature Max175°C
Product RangeG3R
SVHCNo SVHC (17-Dec-2015)
產品總覽
G3R30MT12K is a 1200V, 30mohm, N-channel enhancement mode, silicon carbide MOSFET. Applications include solar inverters, motor drives, EV charging, high voltage DC-DC converters, switched mode power supplies, UPS, smart grid transmission and distribution, induction heating and welding.
- G3R™ (3rd generation) technology, low temperature coefficient of RDS(ON)
- Lower Q and smaller RG(INT), low device capacitances (COSS, CRSS)
- LoRing™ - electromagnetically optimized design, superior cost-performance index
- Robust body diode with low VF and low QRR, 100% avalanche (UIL) tested
- Compatible with commercial gate drivers, low conduction losses at all temperatures
- Faster and more efficient switching, lesser switching spikes and lower losses
- Reduced ringing, better power density and system efficiency
- Ease of paralleling without thermal runaway, superior robustness and system reliability
- Operating and storage temperature range from -55 to 175°C, TO-247-4 package
- Continuous forward current is 50A at Tc = 100°C, V = -5 / +15V
技術規格
MOSFET Module Configuration
Single
Continuous Drain Current Id
90A
Drain Source On State Resistance
0.03ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
2.69V
Operating Temperature Max
175°C
SVHC
No SVHC (17-Dec-2015)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
15V
Power Dissipation
281W
Product Range
G3R
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Dec-2015)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.004536