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BGA7H1N6E6327XTSA1
Low Noise Amplifier, LTE, 2.3 GHz to 2.69 GHz, 12.5 dB Gain, 0.65 dB Noise, 1.5 V to 3.3 V, TSNP-6
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產品訊息
製造商INFINEON
製造商產品編號BGA7H1N6E6327XTSA1
訂購代碼2565692
其他名稱BGA 7H1N6 E6327, SP001109130
技術資料表
Frequency Min2.3GHz
Frequency Max2.69GHz
Gain12.5dB
Noise Figure Typ0.65dB
RF IC Case StyleTSNP
Supply Voltage Min1.5V
Supply Voltage Max3.3V
No. of Pins6Pins
Operating Temperature Min-40°C
Operating Temperature Max85°C
Product Range-
SVHCNo SVHC (21-Jan-2025)
產品總覽
BGA7H1N6E6327XTSA1 is a silicon germanium low noise amplifier for LTE which covers a wide frequency range from 2300MHz to 2690MHz. The LNA provides a 12.5dB gain and 0.60dB noise figure at a current consumption of 4.7mA. The BGA7H1N6 is based upon Infineon Technologies‘ B7HF Silicon germanium technology.
- Digital on/off switch (1V logic high level)
- B7HF silicon germanium technology, RF output internally matched to 50 ohm
- Only 1 external SMD component necessary, 2KV HBM ESD protection (including AI-pin)
- Supply voltage range from 1.5 to 3.3V (A = 25°C, VCC = 1.8V)
- Noise figure is 0.65dB (typ, ZS = 50 ohm, TA = 25°C)
- Reverse isolation is 20dB (typ, TA = 25°C, VCC = 1.8V)
- Stability is <gt/> 1 (typ, f= 20MHz to 10GHz, TA = 25°C)
- Ultra small TSNP-6-2 leadless package
- Ambient temperature range from -40 to 85°C
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Frequency Min
2.3GHz
Gain
12.5dB
RF IC Case Style
TSNP
Supply Voltage Max
3.3V
Operating Temperature Min
-40°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Frequency Max
2.69GHz
Noise Figure Typ
0.65dB
Supply Voltage Min
1.5V
No. of Pins
6Pins
Operating Temperature Max
85°C
MSL
MSL 1 - Unlimited
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85423990
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000008