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產品訊息
製造商INFINEON
製造商產品編號BSM10GD120DN2BOSA1
訂購代碼1496947
其他名稱BSM10GD120DN2, SP000100367
技術資料表
IGBT ConfigurationThree Phase Full Bridge
Continuous Collector Current15A
Collector Emitter Saturation Voltage3.2V
Power Dissipation80W
Operating Temperature Max125°C
Transistor Case StyleEconoPACK
IGBT TerminationPress Fit
Collector Emitter Voltage Max1.2kV
IGBT Technology-
Transistor MountingPanel
Product Range-
SVHCNo SVHC (17-Jan-2023)
產品總覽
The BSM10GD120DN2 is a 1200V IGBT Power Module with 3-phase full-bridge and fast free-wheel diodes.
應用
Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
IGBT Configuration
Three Phase Full Bridge
Collector Emitter Saturation Voltage
3.2V
Operating Temperature Max
125°C
IGBT Termination
Press Fit
IGBT Technology
-
Product Range
-
Continuous Collector Current
15A
Power Dissipation
80W
Transistor Case Style
EconoPACK
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (17-Jan-2023)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Germany
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Jan-2023)
下載產品合規憑證
產品合規憑證
重量 (公斤):.18