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BSM50GD120DN2BOSA1
IGBT MODULE, 1200V, ECONOPACK3
圖片僅供舉例說明。 請參閱產品描述。
不再生產
產品訊息
製造商INFINEON
製造商產品編號BSM50GD120DN2BOSA1
訂購代碼1496949
其他名稱BSM50GD120DN2, SP000100359
技術資料表
IGBT ConfigurationSix Pack [Full Bridge]
Continuous Collector Current72A
Collector Emitter Saturation Voltage3V
Power Dissipation350W
Operating Temperature Max125°C
Transistor Case StyleEconoPACK
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT Technology-
Transistor MountingPanel
Product Range-
SVHCNo SVHC (17-Jan-2023)
產品總覽
The BSM50GD120DN2 is an IGBT Low Power Module with fast free wheel diodes and insulated metal base plate.
- 3-phase Full bridge
- 100ns Rise time
- 100ns Fall time
- ±20V Gate-emitter voltage
應用
Industrial
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
IGBT Configuration
Six Pack [Full Bridge]
Collector Emitter Saturation Voltage
3V
Operating Temperature Max
125°C
IGBT Termination
Stud
IGBT Technology
-
Product Range
-
Continuous Collector Current
72A
Power Dissipation
350W
Transistor Case Style
EconoPACK
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (17-Jan-2023)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Jan-2023)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.18