CY14B104LA-ZS25XI

CY14B104LA-ZS25XI is a 4Mbit (512K × 8) nvSRAM with a non-volatile element in each memory cell. The embedded non-volatile elements incorporate QuantumTrap technology, producing the world’s most reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.

• 3.0V voltage, 4Mb density, × 8 data bus, 1st die revision
• 20ns, 25ns, and 45ns access times
• Hands off automatic STORE on power-down with only a small capacitor
• STORE to QuantumTrap non-volatile elements initiated by software/device pin/AutoStore on power-down
• RECALL to SRAM initiated by software or power-up
• Infinite read, write, and recall cycles, 1 million STORE cycles to quantum trap
• 20 year data retention, single 3V +20%, –10% operation
• Supply voltage range from 2.7V to 3.6V
• 5mA maximum average VCAP current during autostore cycle
• 44-pin TSOP II package, industrial temperature range from -40 to +85°C