CY7C1021DV33-10BVXIT

CY7C1021DV33-10BVXIT is a CY7C1021DV33 high-performance CMOS static RAM organized as 65536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Writing to the device is accomplished by taking chip enable active-low (CE) and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A15). If byte high enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A15).

• Pin-and function-compatible with CY7C1021CV33
• High speed is tAA = 10ns
• Low active power ICC = 60 mA at 10ns
• Low active power ICC = 60mA at 10ns
• 2.0V data retention
• Automatic power-down when deselected
• CMOS for optimum speed/power, independent control of upper and lower bits
• 48-ball VFBGA package
• Industrial ambient temperature range from –40°C to +85°C