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| 數量 | 價格 |
|---|---|
| 1+ | NT$7,508.670 |
產品訊息
產品總覽
EVALHBPARALLELGANTOBO1 is a test platform for design engineers who want to investigate parallel operation of Infineon CoolGaN™ to reach higher power levels in their designs. It is possible to check dynamic and static current sharing of individual devices in parallel configuration up to MHz level. The board also makes a good reference for PCB layout practices to achieve trouble-free operation with extremely fast GaN devices. The board is designed with isolated control and high/low-side driver power supply and drivers provide negative voltage to the gates during off-time to minimize the risk of shoot-through currents due to high dV/dt. A heatsink with insulating thermal pad may be attached to the devices if continuous operation at high power is desired. Gate common-mode inductors included to prevent coupling through the source terminals of the devices that might lead to oscillations. Suitable for Power supplies (SMPS) application.
- Evaluate paralleling of CoolGaN™ 600V HEMT in half bridge configuration for higher power application
- Configurable for buck, boost or pulsed operation for hard- or soft-switching
- Static and dynamic current sharing can be monitored through separate shunt resistors
- Adjustable dead time
- Doubling the current carrying capacity by effectively halving the RDS(on)
- Single driver can drive two parallel GaN devices
- On-board: CoolGaN™ 600V e-mode HEMT(IGOT60R070D1). 1200V high-side gate-driver IC (1EDI20N12AF)
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Infineon
Power Management
Evaluation Board IGOT60R070D1
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IGOT60R070D1
E-Mode Power Transistor
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No SVHC (25-Jun-2025)
技術文件 (1)
法規與環境保護
承擔產品生產最後程序之國家原產地:Slovenia
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證
