列印頁面
FF6MR12W2M1PB11BPSA1
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 200 A, 1.2 kV, 5630 µohm, Module
圖片僅供舉例說明。 請參閱產品描述。
製造商INFINEON
製造商產品編號FF6MR12W2M1PB11BPSA1
訂購代碼3577293
Product RangeEasyDUAL CoolSiC
其他名稱FF6MR12W2M1P_B11, SP004134434
您的零件号
技術資料表
不再生產
產品訊息
製造商INFINEON
製造商產品編號FF6MR12W2M1PB11BPSA1
訂購代碼3577293
Product RangeEasyDUAL CoolSiC
其他名稱FF6MR12W2M1P_B11, SP004134434
技術資料表
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id200A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance5630µohm
Transistor Case StyleModule
No. of Pins-
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max4.5V
Power Dissipation-
Operating Temperature Max150°C
Product RangeEasyDUAL CoolSiC
SVHCNo SVHC (27-Jun-2018)
產品總覽
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
200A
Drain Source On State Resistance
5630µohm
No. of Pins
-
Gate Source Threshold Voltage Max
4.5V
Operating Temperature Max
150°C
SVHC
No SVHC (27-Jun-2018)
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
15V
Power Dissipation
-
Product Range
EasyDUAL CoolSiC
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2018)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.040823