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FF8MR12W2M1PB11BPSA1
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 150 A, 1.2 kV, 7500 µohm, Module
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製造商INFINEON
製造商產品編號FF8MR12W2M1PB11BPSA1
訂購代碼3577294
Product RangeEasyDUAL CoolSiC
其他名稱FF8MR12W2M1P_B11, SP005341588
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技術資料表
不再生產
產品訊息
製造商INFINEON
製造商產品編號FF8MR12W2M1PB11BPSA1
訂購代碼3577294
Product RangeEasyDUAL CoolSiC
其他名稱FF8MR12W2M1P_B11, SP005341588
技術資料表
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id150A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance7500µohm
Transistor Case StyleModule
No. of Pins-
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max4.5V
Power Dissipation-
Operating Temperature Max150°C
Product RangeEasyDUAL CoolSiC
SVHCNo SVHC (27-Jun-2018)
產品總覽
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
150A
Drain Source On State Resistance
7500µohm
No. of Pins
-
Gate Source Threshold Voltage Max
4.5V
Operating Temperature Max
150°C
SVHC
No SVHC (27-Jun-2018)
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
15V
Power Dissipation
-
Product Range
EasyDUAL CoolSiC
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2018)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.041277