FM24C16B-GTR

FM24C16B-GTR is a 16-Kbit (2K × 8) serial (I²C) F-RAM memory. It is a 16-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories. F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. The FM24C16B is capable of supporting 10^14 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM24C16B ideal for non-volatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss.

• NoDelay™ writes, advanced high-reliability ferroelectric process
• Fast 2-wire serial interface (I2C), up to 1MHz frequency
• Direct hardware replacement for serial (I²C) EEPROM
• Supports legacy timings for 100KHz and 400KHz
• Voltage operation: VDD=4.5V to 5.5V
• Average VDD current is 100µA max at fSCL=100KHz
• Standby current is 4µA typ at SCL=SDA=VDD
• Data retention is 10 years at TA=85°C
• 8-pin SOIC package
• Industrial operating temperature range from -40°C to +85°C