FM25V10-G

FM25V10-G is a 1-Mbit Serial (SPI) F-RAM in an 8 pin SOIC package. It is a 1-Mbit non-volatile memory employing an advanced ferroelectric process. A F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. Unlike serial flash and EEPROM, the FM25V10 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. The FM25V10 is capable of supporting 10^14 read/write cycles, or 100 million times more write cycles than EEPROM.

• 1Mbit ferroelectric random access memory (F-RAM) logically organized as 128K × 8
• Very fast serial peripheral interface (SPI)
• Direct hardware replacement for serial flash and EEPROM
• Low power consumption of 300µA active current at 1MHz, 90µA (typ) standby current
• Low-voltage operation VDD = 2.7V to 3.6V
• Industrial temperature range from –40°C to +85°C