IDDD08G65C6XTMA1
Silicon Carbide Schottky Diode, CoolSiC 6G 650V, Single, 650 V, 24 A, 12.2 nC, HDSOP
1,700 即日起您可預購補貨
| 數量 | 價格 |
|---|---|
| 100+ | NT$66.300 |
| 500+ | NT$58.850 |
| 1000+ | NT$47.680 |
產品訊息
產品總覽
The CoolSiC™ generation G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The G6 is an advancement of Infineon's G5 technology with the introduction of a novel Schottky metal system. The CoolSiC™ Schottky diode G6 has been designed to complement our 600V and 650V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range. Offering key benefits such as System cost and size savings due to the reduced cooling requirements as well as enabling higher frequency and increased power density.
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
CoolSiC 6G 650V
650V
12.2nC
10 Pin
Surface Mount
No SVHC (25-Jun-2025)
Single
24A
HDSOP
175°C
-
技術文件 (1)
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