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IDDD20G65C6XTMA1
Silicon Carbide Schottky Diode, CoolSiC 6G 650V, Single, 650 V, 51 A, 26.8 nC, HDSOP
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製造商INFINEON
製造商產品編號IDDD20G65C6XTMA1
訂購代碼2895608RL
Product RangeCoolSiC 6G 650V
其他名稱IDDD20G65C6, SP001679796
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技術資料表
1,104 有存貨
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1104 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 10+ | NT$169.050 |
| 100+ | NT$128.670 |
| 500+ | NT$124.410 |
| 1000+ | NT$120.140 |
價格Each (Supplied on Cut Tape)
最少: 10
多項: 1
NT$1,690.50
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產品訊息
製造商INFINEON
製造商產品編號IDDD20G65C6XTMA1
訂購代碼2895608RL
Product RangeCoolSiC 6G 650V
其他名稱IDDD20G65C6, SP001679796
技術資料表
Product RangeCoolSiC 6G 650V
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage650V
Average Forward Current51A
Total Capacitive Charge26.8nC
Diode Case StyleHDSOP
No. of Pins10 Pin
Operating Temperature Max175°C
Diode MountingSurface Mount
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The CoolSiC™ generation G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The G6 is an advancement of Infineon's G5 technology with the introduction of a novel Schottky metal system. The CoolSiC™ Schottky diode G6 has been designed to complement our 600V and 650V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range. Offering key benefits such as System cost and size savings due to the reduced cooling requirements as well as enabling higher frequency and increased power density.
技術規格
Product Range
CoolSiC 6G 650V
Repetitive Peak Reverse Voltage
650V
Total Capacitive Charge
26.8nC
No. of Pins
10 Pin
Diode Mounting
Surface Mount
SVHC
No SVHC (25-Jun-2025)
Diode Configuration
Single
Average Forward Current
51A
Diode Case Style
HDSOP
Operating Temperature Max
175°C
Qualification
-
技術文件 (1)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.011476