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| 數量 | 價格 |
|---|---|
| 10+ | NT$243.170 |
| 50+ | NT$237.320 |
| 100+ | NT$231.470 |
| 250+ | NT$227.750 |
產品訊息
產品總覽
IMDQ75R027M1HXUMA1 is a CoolSiC™ MOSFET 750V Generation 1 (G1) in Q-DPAK package. The CoolSiC™ MOSFET 750V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling a simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750V strengths offering more density, optimized power loop design and less system and assembly cost. Typical applications include solid state relays and circuit breakers, EV charging infrastructure, solar PV inverters, UPS (uninterruptable power supplies, energy storage and battery formation and telecom and server SMPS.
- 27mohm RDs(on) typical
- Highly robust 750V technology, 100% avalanche tested
- Enhanced robustness and reliability for bus voltages beyond 500V
- Superior efficiency in hard switching
- Higher switching frequency in soft switching topologies
- Robustness against parasitic turn on for unipolar gate driving
- Best‑in‑class thermal dissipation
- Reduced switching losses through improved gate control
技術規格
64A
0.025ohm
20V
273W
No SVHC (25-Jun-2025)
750V
22Pins
5.6V
175°C
技術文件 (1)
法規與環境保護
承擔產品生產最後程序之國家原產地:Malaysia
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證