列印頁面
產品訊息
製造商INFINEON
製造商產品編號IPB033N10N5LFATMA1
訂購代碼2986457
Product RangeOptiMOS 5
其他名稱IPB033N10N5LF, SP001503858
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id120A
Drain Source On State Resistance3300µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.3V
Power Dissipation179W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeOptiMOS 5
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
IPB033N10N5LFATMA1 is a 100V OptiMOSTM5LinearFET ideal for hot-swap and e-fuse applications.
- Very low on-resistance RDS(on)
- Wide safe operating area SOA
- N-channel, normal level
- 100% avalanche tested
- Qualified according to JEDEC for target applications
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
120A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
179W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
3300µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.3V
No. of Pins
3Pins
Product Range
OptiMOS 5
MSL
MSL 1 - Unlimited
技術文件 (1)
IPB033N10N5LFATMA1 的替代選擇
找到 8 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000045