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IPB65R110CFDAATMA1
Power MOSFET, N Channel, 650 V, 31.2 A, 0.11 ohm, TO-263 (D2PAK), Surface Mount
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製造商INFINEON
製造商產品編號IPB65R110CFDAATMA1
訂購代碼2726046
Product RangeCoolMOS CFDA
其他名稱IPB65R110CFDA, SP000896402
您的零件号
技術資料表
產品訊息
製造商INFINEON
製造商產品編號IPB65R110CFDAATMA1
訂購代碼2726046
Product RangeCoolMOS CFDA
其他名稱IPB65R110CFDA, SP000896402
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id31.2A
Drain Source On State Resistance0.11ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation277.8mW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS CFDA
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
650V CoolMOS™ CFDA power transistor a revolutionary technology for high voltage power MOSFETs.
- Designed according to the superjunction (SJ) principle
- Ultra-fast body diode
- Very high commutation ruggedness
- Extremely low losses due to very low FOM Rdson*Qg and EOSS
- Easy to use/drive
- Qualified according to AEC Q101
- Designed for switching applications
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
31.2A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
277.8mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.11ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
CoolMOS CFDA
MSL
MSL 1 - Unlimited
技術文件 (1)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.002