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IPD135N03LGATMA1
Power MOSFET, N Channel, 30 V, 30 A, 0.0135 ohm, TO-252 (DPAK), Surface Mount
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產品訊息
製造商INFINEON
製造商產品編號IPD135N03LGATMA1
訂購代碼2480822
其他名稱IPD135N03L G, SP000796912
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id30A
Drain Source On State Resistance0.0135ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation31W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The IPD135N03L G is a N-channel MOSFET Transistor with low on resistance and Halogen free.
- Ultra low gate and output charge
- Increased battery lifetime
- Improved EMI behaviour making external snubber networks obsolete
- Reducing power losses
應用
Lighting, Industrial, Motor Drive & Control
技術規格
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
31W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0135ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
技術文件 (1)
IPD135N03LGATMA1 的替代選擇
找到 4 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.00143