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IPG20N06S4L26ATMA1
Dual MOSFET, N Channel, 60 V, 60 V, 20 A, 20 A, 0.021 ohm
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產品訊息
製造商INFINEON
製造商產品編號IPG20N06S4L26ATMA1
訂購代碼2480844
其他名稱IPG20N06S4L-26, SP000705588
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel20A
Continuous Drain Current Id P Channel20A
Drain Source On State Resistance N Channel0.021ohm
Drain Source On State Resistance P Channel0.021ohm
Transistor Case StyleTDSON
No. of Pins8Pins
Power Dissipation N Channel33W
Power Dissipation P Channel33W
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (21-Jan-2025)
產品總覽
The IPG20N06S4L-26 is an OptiMOS™-T2 dual N-channel enhancement-mode Power Transistor for direct fuel injection, ABS valves, solenoid control and load switch applications.
- Logic level
- Green device
- 100% Avalanche tested
- Larger source lead-frame connection for wire bonding
- Same thermal and electrical performance as a DPAK with the same die size
- Exposed pad provides excellent thermal transfer (varies by die size)
應用
Industrial, Lighting, LED Lighting, Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
20A
Drain Source On State Resistance P Channel
0.021ohm
No. of Pins
8Pins
Power Dissipation P Channel
33W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
20A
Drain Source On State Resistance N Channel
0.021ohm
Transistor Case Style
TDSON
Power Dissipation N Channel
33W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001814