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IPLU300N04S4R8XTMA1
Power MOSFET, N Channel, 40 V, 300 A, 770 µohm, H-PSOF-8-1, Surface Mount
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製造商INFINEON
製造商產品編號IPLU300N04S4R8XTMA1
訂購代碼2725859
Product RangeOptiMOS T2
其他名稱IPLU300N04S4-R8, SP001063102
您的零件号
技術資料表
產品訊息
製造商INFINEON
製造商產品編號IPLU300N04S4R8XTMA1
訂購代碼2725859
Product RangeOptiMOS T2
其他名稱IPLU300N04S4-R8, SP001063102
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id300A
Drain Source On State Resistance770µohm
Transistor Case StyleH-PSOF-8-1
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation429W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangeOptiMOS T2
QualificationAEC-Q101
SVHCNo SVHC (21-Jan-2025)
產品總覽
- OptiMOS™-T2 power-transistor
- N-channel enhancement mode
- AEC qualified
- 175°C operating temperature
- Ultra-low Rds(on)
- 100% avalanche tested
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
300A
Transistor Case Style
H-PSOF-8-1
Rds(on) Test Voltage
10V
Power Dissipation
429W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
770µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
OptiMOS T2
MSL
MSL 1 - Unlimited
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000915