列印頁面
IPT111N20NFDATMA1
Power MOSFET, N Channel, 200 V, 96 A, 0.0111 ohm, HSOF, Surface Mount
圖片僅供舉例說明。 請參閱產品描述。
製造商INFINEON
製造商產品編號IPT111N20NFDATMA1
訂購代碼2803401RL
Product RangeOptiMOS 3 Series
其他名稱IPT111N20NFD, SP001340384
您的零件号
技術資料表
不再生產
產品訊息
製造商INFINEON
製造商產品編號IPT111N20NFDATMA1
訂購代碼2803401RL
Product RangeOptiMOS 3 Series
其他名稱IPT111N20NFD, SP001340384
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id96A
Drain Source On State Resistance0.0111ohm
Transistor Case StyleHSOF
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation375W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangeOptiMOS 3 Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
產品總覽
- 200V OptiMOS™ 3 power transistor
- N-channel, normal level
- Fast diode(FD) with reduced Qrr
- Optimized for hard commutation ruggedness
- Very low on-resistance RDS(on)
- 175°C operating temperature
- Qualified according to JEDEC for target application
- Halogen-free according to IEC61249-2-21
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
96A
Transistor Case Style
HSOF
Rds(on) Test Voltage
10V
Power Dissipation
375W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.0111ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
OptiMOS 3 Series
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.004536