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| 數量 | 價格 |
|---|---|
| 1+ | NT$113.470 |
| 10+ | NT$83.700 |
| 25+ | NT$78.830 |
| 50+ | NT$75.580 |
| 100+ | NT$72.520 |
| 250+ | NT$69.770 |
| 500+ | NT$67.940 |
| 1000+ | NT$65.760 |
產品訊息
產品總覽
The IR2104PBF is a high voltage, high speed power MOSFET and IGBT Half-bridge Driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage
- dV/dt Immune
- Under voltage lockout
- 3.3, 5 and 15V Input logic compatible
- Cross-conduction prevention logic
- Internally set dead time
- High side output in phase with input
- Shutdown input turns off both channels
- Matched propagation delay for both channels
應用
Industrial, Consumer Electronics, Alternative Energy, Power Management
技術規格
2Channels
Half Bridge
8Pins
Through Hole
210mA
10V
-55°C
680ns
-
-
-
IGBT, MOSFET
DIP
Non-Inverting
360mA
20V
150°C
150ns
-
No SVHC (25-Jun-2025)
IR2104PBF 的替代選擇
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法規與環境保護
承擔產品生產最後程序之國家原產地:Malaysia
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證