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| 數量 | 價格 |
|---|---|
| 1+ | NT$93.760 |
| 10+ | NT$75.810 |
| 25+ | NT$69.710 |
| 50+ | NT$66.350 |
| 100+ | NT$62.980 |
| 250+ | NT$59.780 |
| 500+ | NT$57.850 |
| 1000+ | NT$56.060 |
產品訊息
產品總覽
The IR2113STRPBF is a high voltage high speed power MOSFET and IGBT high and low-side Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 or 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- CMOS Schmitt-triggered inputs with pull-down
- Cycle by cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
應用
Sensing & Instrumentation, Motor Drive & Control, Medical, Automation & Process Control
技術規格
2Channels
High Side and Low Side
16Pins
Surface Mount
2A
10V
-40°C
120ns
-
MSL 3 - 168 hours
-
IGBT, MOSFET
SOIC
Non-Inverting
2A
20V
125°C
94ns
-
No SVHC (25-Jun-2025)
IR2113STRPBF 的替代選擇
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承擔產品生產最後程序之國家原產地:United States
承擔產品生產最後程序之國家
RoHS
RoHS
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