產品訊息
產品總覽
The IR2183PBF is a high voltage high speed power MOSFET and IGBT Half-bridge Gate Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Tolerant to negative transient voltage DV/DT Immune
- Under-voltage lockout for both channels
- Matched propagation delay for both channels
- Lower DI/DT gate driver for better noise immunity
- Logic and power ground ±5V offset
應用
Industrial, Consumer Electronics, Alternative Energy, Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
2Channels
High Side and Low Side
8Pins
Through Hole
1.9A
10V
-40°C
180ns
-
-
-
IGBT, MOSFET
DIP
Inverting, Non-Inverting
2.3A
20V
125°C
220ns
-
No SVHC (08-Jul-2021)
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法規與環境保護
承擔產品生產最後程序之國家原產地:Malaysia
承擔產品生產最後程序之國家
RoHS
RoHS
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