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| 數量 | 價格 |
|---|---|
| 1+ | NT$80.430 |
| 10+ | NT$36.450 |
| 100+ | NT$33.160 |
| 500+ | NT$32.710 |
| 1000+ | NT$32.260 |
| 5000+ | NT$31.800 |
價格Each
最少: 1
多項: 1
NT$80.43
品項附註
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產品訊息
製造商INFINEON
製造商產品編號IRF1407PBF
訂購代碼8657424
其他名稱SP001564238
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id130A
Drain Source On State Resistance7800µohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation330W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The IRF1407PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
- Advanced process technology
- Dynamic dV/dt rating
- Repetitive avalanche allowed up to Tjmax
應用
Motor Drive & Control, Automotive, Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
130A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
330W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
75V
Drain Source On State Resistance
7800µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
IRF1407PBF 的替代選擇
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:South Korea
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:South Korea
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.002041