800 即日起您可預購補貨
| 數量 | 價格 |
|---|---|
| 1+ | NT$83.330 |
| 10+ | NT$53.480 |
| 50+ | NT$45.150 |
| 100+ | NT$36.810 |
| 250+ | NT$36.080 |
產品訊息
產品總覽
The IRF3205STRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Advanced process technology
- Dynamic dV/dt rating
- Fully avalanche rating
應用
Power Management
技術規格
N Channel
110A
TO-263 (D2PAK)
10V
200W
175°C
-
No SVHC (25-Jun-2025)
55V
8000µohm
Surface Mount
4V
3Pins
-
MSL 1 - Unlimited
IRF3205STRLPBF 的替代選擇
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法規與環境保護
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證