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IRF3415PBF
Power MOSFET, N Channel, 150 V, 37 A, 0.042 ohm, TO-220AB, Through Hole
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| 數量 | 價格 |
|---|---|
| 1+ | NT$67.420 |
| 10+ | NT$49.920 |
| 100+ | NT$40.610 |
| 500+ | NT$34.650 |
| 1000+ | NT$34.080 |
價格Each
最少: 1
多項: 1
NT$67.42
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IRF3415PBF
訂購代碼8648093
其他名稱SP001564438
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id37A
Drain Source On State Resistance0.042ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The IRF3415PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
- Advanced process technology
- Dynamic dV/dt rating
- Fully avalanche rating
應用
Commercial, Industrial, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
37A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.042ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
技術文件 (1)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.002844