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IRF3808SPBF
Power MOSFET, N Channel, 75 V, 106 A, 7000 µohm, TO-263 (D2PAK), Surface Mount
不再生產
產品訊息
製造商INFINEON
製造商產品編號IRF3808SPBF
訂購代碼1013377
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id106A
Drain Source On State Resistance7000µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation200W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
產品總覽
The IRF3808SPBF is a HEXFET® single N-channel advanced planar stripe Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. It features 175°C junction operating temperature, low junction-to-case, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in a wide variety of applications.
- Advanced process technology
- Dynamic dV/dt rating
- Repetitive avalanche allowed up to Tjmax
應用
Motor Drive & Control, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
106A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
200W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
75V
Drain Source On State Resistance
7000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
技術文件 (1)
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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重量 (公斤)：.00144