IRF7104TRPBF
Dual MOSFET, P Channel, 20 V, 20 V, 2.3 A, 2.3 A, 0.19 ohm
產品訊息
產品總覽
The IRF7104TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Advanced process technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
應用
Industrial, Power Management
技術規格
P Channel
20V
2.3A
0.19ohm
2.3A
0.19ohm
0.19ohm
3V
2W
2W
-
-
No SVHC (21-Jan-2025)
P Channel
20V
20V
2.3A
Surface Mount
10V
SOIC
8Pins
2W
150°C
-
MSL 1 - Unlimited
IRF7104TRPBF 的替代選擇
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法規與環境保護
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證