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IRF7341GTRPBF
Dual MOSFET, N Channel, 55 V, 55 V, 5.1 A, 5.1 A, 0.043 ohm
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製造商INFINEON
製造商產品編號IRF7341GTRPBF
訂購代碼2839483RL
Product RangeHEXFET Series
其他名稱IRF7341GTRPBF, SP001563394
您的零件号
技術資料表
3,144 有存貨
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3144 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 50+ | NT$36.450 |
| 250+ | NT$29.920 |
| 1000+ | NT$28.240 |
| 2000+ | NT$26.140 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 1
NT$3,645.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IRF7341GTRPBF
訂購代碼2839483RL
Product RangeHEXFET Series
其他名稱IRF7341GTRPBF, SP001563394
技術資料表
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds55V
Drain Source Voltage Vds N Channel55V
Drain Source Voltage Vds P Channel55V
Continuous Drain Current Id5.1A
Continuous Drain Current Id N Channel5.1A
On Resistance Rds(on)0.043ohm
Continuous Drain Current Id P Channel5.1A
Drain Source On State Resistance N Channel0.043ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.043ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation Pd1.7W
Power Dissipation N Channel1.7W
Power Dissipation P Channel1.7W
Operating Temperature Max175°C
Product RangeHEXFET Series
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
HEXFET® power MOSFET utilize the latest processing techniques to achieve extremely low on-resistance per silicon area.
- Advanced process technology
- Dual N-channel MOSFET
- Ultra-low on-resistance
- 175°C operating temperature
- Repetitive avalanche allowed up to Tjmax
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Drain Source Voltage Vds
55V
Drain Source Voltage Vds P Channel
55V
Continuous Drain Current Id N Channel
5.1A
Continuous Drain Current Id P Channel
5.1A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
1.7W
Power Dissipation P Channel
1.7W
Product Range
HEXFET Series
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
55V
Continuous Drain Current Id
5.1A
On Resistance Rds(on)
0.043ohm
Drain Source On State Resistance N Channel
0.043ohm
Drain Source On State Resistance P Channel
0.043ohm
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Power Dissipation N Channel
1.7W
Operating Temperature Max
175°C
Qualification
-
MSL
-
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00027