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IRF7807APBF
Power MOSFET, N Channel, 30 V, 8.3 A, 0.025 ohm, SOIC, Surface Mount
不再生產
產品訊息
製造商INFINEON
製造商產品編號IRF7807APBF
訂購代碼9102930
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id8.3A
Drain Source On State Resistance0.025ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
IRF7807APBF 的替代選擇
找到 3 個產品
產品總覽
The IRF7807APBF is a HEXFET® single N-channel Power MOSFET to achieve an unprecedented balance of ON-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-to-DC converters that power the latest generation of mobile microprocessors.
- Low conduction losses
- Low switching losses
應用
Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
8.3A
Transistor Case Style
SOIC
Rds(on) Test Voltage
4.5V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.025ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
技術文件 (1)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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產品合規憑證
重量 (公斤)：.000167