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IRF7832PBF
Power MOSFET, N Channel, 30 V, 20 A, 4000 µohm, SOIC, Surface Mount
不再生產
產品訊息
製造商INFINEON
製造商產品編號IRF7832PBF
訂購代碼1013449
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id20A
Drain Source On State Resistance4000µohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.32V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max155°C
Product Range-
Qualification-
IRF7832PBF 的替代選擇
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產品總覽
The IRF7832PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for notebook processor power and isolated DC-to-DC converters.
- Ultra-low gate impedance
- Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
- 100% Rg tested
- 20V VGS Maximum gate rating
應用
Computers & Computer Peripherals, Communications & Networking, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
20A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
155°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
4000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.32V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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產品合規憑證
重量 (公斤)：.000167