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IRF7853PBF
Power MOSFET, N Channel, 100 V, 8.3 A, 0.018 ohm, SOIC, Surface Mount
不再生產
產品訊息
製造商INFINEON
製造商產品編號IRF7853PBF
訂購代碼1298555
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id8.3A
Drain Source On State Resistance0.018ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.9V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
The IRF7853PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for primary side switch in bridge topology in universal input (36 to 75Vin) isolated DC-to-DC converters, primary side switch in push-pull topology for 18 to 36Vin isolated DC-to-DC converter, secondary side synchronous rectification switch for 15Vout and 48V non-isolated synchronous buck DC-to-DC applications.
- Fully characterized capacitance including effective COSS to simplify design
- Fully characterized avalanche voltage and current
應用
Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
8.3A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.018ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4.9V
No. of Pins
8Pins
Product Range
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000175