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IRF7862PBF
Power MOSFET, N Channel, 30 V, 21 A, 3300 µohm, SOIC, Surface Mount
不再生產
產品訊息
製造商INFINEON
製造商產品編號IRF7862PBF
訂購代碼1551898
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id21A
Drain Source On State Resistance3300µohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5.4V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
IRF7862PBF 的替代選擇
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產品總覽
The IRF7862PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for battery protection, high side and low side load switch, notebook processor power and isolated DC-to-DC converters.
- Ultra-low gate impedance
- Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
- 100% Rg tested
- 20V VGS Maximum gate rating
應用
Power Management, Computers & Computer Peripherals
技術規格
Channel Type
N Channel
Continuous Drain Current Id
21A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
3300µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5.4V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000247