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IRF7904TRPBF
Dual MOSFET, N Channel, 30 V, 30 V, 11 A, 11 A, 8600 µohm
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不再生產
產品訊息
製造商INFINEON
製造商產品編號IRF7904TRPBF
訂購代碼2725919RL
Product RangeHEXFET Series
其他名稱SP001575344
技術資料表
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id11A
Continuous Drain Current Id N Channel11A
On Resistance Rds(on)0.0086ohm
Continuous Drain Current Id P Channel11A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel8600µohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel8600µohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max2.25V
No. of Pins8Pins
Power Dissipation Pd2W
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (23-Jan-2024)
IRF7904TRPBF 的替代選擇
找到 1 個產品
技術規格
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
11A
Continuous Drain Current Id P Channel
11A
Drain Source On State Resistance N Channel
8600µohm
Drain Source On State Resistance P Channel
8600µohm
Gate Source Threshold Voltage Max
2.25V
Power Dissipation Pd
2W
Power Dissipation P Channel
2W
Product Range
HEXFET Series
Automotive Qualification Standard
-
SVHC
No SVHC (23-Jan-2024)
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
11A
On Resistance Rds(on)
0.0086ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (23-Jan-2024)
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產品合規憑證
重量 (公斤)：.002722