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IRFB4227PBF
Power MOSFET, N Channel, 200 V, 65 A, 0.024 ohm, TO-220AB, Through Hole
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2,507 有存貨
2,000 即日起您可預購補貨
113 件可于 1-2 個工作日後配送(新加坡 件庫存)
2394 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$79.990 |
| 10+ | NT$39.210 |
| 100+ | NT$35.260 |
| 500+ | NT$28.330 |
| 1000+ | NT$27.520 |
| 5000+ | NT$26.740 |
價格Each
最少: 1
多項: 1
NT$79.99
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IRFB4227PBF
訂購代碼1298536
Product RangeHEXFET Series
其他名稱SP001565892
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id65A
Drain Source On State Resistance0.024ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation330W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET Series
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The IRFB4227PBF is a 200V single N-channel HEXFET® Power MOSFET PDP switch designed to sustain, energy recovery and pass switch applications for plasma display panels. By adapting the latest techniques it achieves low on-resistance per silicon area and EPULSE rating.
- 175°C Operating temperature
- Low QG for fast response
- High repetitive peak current capability for reliable operation
- Short fall and rise times for fast switching
- Repetitive avalanche capability for robustness and reliability
應用
Power Management, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
65A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
330W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.024ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
HEXFET Series
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.004536