列印頁面
IRFB7730PBF
Power MOSFET, HEXFET, N Channel, 75 V, 195 A, 2600 µohm, TO-220AB, Through Hole
圖片僅供舉例說明。 請參閱產品描述。
932 有存貨
需要更多？
932 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$78.960 |
| 10+ | NT$48.090 |
| 100+ | NT$46.470 |
| 500+ | NT$45.980 |
| 1000+ | NT$45.770 |
價格Each
最少: 1
多項: 1
NT$78.96
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IRFB7730PBF
訂購代碼2456726
其他名稱SP001556128
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id195A
Drain Source On State Resistance2600µohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.7V
Power Dissipation375mW
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The IRFB7730PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. The StrongIRFET™ power MOSFET is suitable for battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters.
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and di/dt capability
應用
Motor Drive & Control, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
195A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
375mW
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
75V
Drain Source On State Resistance
2600µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.7V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.003503