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IRFF130
Power MOSFET, N Channel, 100 V, 8 A, 0.207 ohm, TO-205AD, Through Hole
不再生產
產品訊息
製造商INFINEON
製造商產品編號IRFF130
訂購代碼4190798
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id8A
Drain Source On State Resistance0.207ohm
Transistor Case StyleTO-205AD
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
IRFF130 的替代選擇
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產品總覽
The IRFF130 is a HEXFET® N-channel Power MOSFET suitable for inverters, choppers and high energy pulse circuit. The efficient geometry and unique processing of this latest state of the art design achieves very low ON-state resistance combined with high transconductance. The HEXFET® transistor also features all of the well established advantages of MOSFET such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
- Repetitive avalanche rating
- Dynamic dV/dt rating
- Hermetically sealed
- Simple drive requirements
- Ease of paralleling
應用
Power Management, Motor Drive & Control, Audio, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
8A
Transistor Case Style
TO-205AD
Rds(on) Test Voltage
10V
Power Dissipation
25W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.207ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
技術文件 (1)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：否
符合 RoHS 鄰苯二甲酸酯類規定:否
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重量 (公斤)：.001134