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IRFH4255DTRPBF
Dual MOSFET, N Channel + Schottky, 25 V, 105 A, 1500 µohm
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製造商INFINEON
製造商產品編號IRFH4255DTRPBF
訂購代碼2577195RL
Product RangeFastIRFET HEXFET Series
其他名稱SP001575678
您的零件号
技術資料表
不再生產
產品訊息
製造商INFINEON
製造商產品編號IRFH4255DTRPBF
訂購代碼2577195RL
Product RangeFastIRFET HEXFET Series
其他名稱SP001575678
技術資料表
Transistor PolarityN Channel + Schottky
Drain Source Voltage Vds25V
Drain Source Voltage Vds N Channel25V
Continuous Drain Current Id105A
Drain Source Voltage Vds P Channel-
On Resistance Rds(on)0.0012ohm
Continuous Drain Current Id N Channel105A
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel1500µohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Transistor Case StyleQFN
Gate Source Threshold Voltage Max1.6V
No. of Pins10Pins
Power Dissipation Pd38W
Power Dissipation N Channel38W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product RangeFastIRFET HEXFET Series
Qualification-
Automotive Qualification Standard-
產品總覽
IRFH4255DTRPBF is a HEXFET® power MOSFET suitable for control and synchronous MOSFETs for synchronous buck converters.
- Control and synchronous MOSFETs in one package
- Low charge control MOSFET (10nC typical)
- Low RDSON synchronous MOSFET (<lt/>2.10mohm)
- Intrinsic schottky diode with low forward voltage on Q2
- Increased power density
- Lower conduction losses
- Environmentally friendlier
- Lower switching losses
- Increased reliability
- Dual PQFN 5.0038mm x 6.0198mm package
技術規格
Transistor Polarity
N Channel + Schottky
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
105A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
QFN
No. of Pins
10Pins
Power Dissipation N Channel
38W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds
25V
Continuous Drain Current Id
105A
On Resistance Rds(on)
0.0012ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
1500µohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
1.6V
Power Dissipation Pd
38W
Power Dissipation P Channel
-
Product Range
FastIRFET HEXFET Series
Automotive Qualification Standard
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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產品合規憑證
重量 (公斤)：.0001