列印頁面
IRFP054NPBF
Power MOSFET, General Purpose, N Channel, 55 V, 72 A, 0.012 ohm, TO-247AC, Through Hole
圖片僅供舉例說明。 請參閱產品描述。
912 有存貨
需要更多？
912 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$98.520 |
| 10+ | NT$57.310 |
| 100+ | NT$51.900 |
| 500+ | NT$46.480 |
| 1000+ | NT$41.060 |
價格Each
最少: 1
多項: 1
NT$98.52
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IRFP054NPBF
訂購代碼9103082
其他名稱SP001566178
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id72A
Drain Source On State Resistance0.012ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation130W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The IRFP054NPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation.
- Advanced process technology
- Dynamic dV/dt rating
- Fast switching
- Fully avalanche rating
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
72A
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
10V
Power Dissipation
130W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.012ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
找到 4 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.005897