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IRFR3607PBF
Power MOSFET, N Channel, 75 V, 56 A, 7340 µohm, TO-252 (DPAK), Surface Mount
不再生產
產品訊息
製造商INFINEON
製造商產品編號IRFR3607PBF
訂購代碼1602230
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id56A
Drain Source On State Resistance7340µohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max4V
Power Dissipation140W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
IRFR3607PBF 的替代選擇
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產品總覽
The IRFR3607PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized capacitance and avalanche SOA. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Enhanced body diode dV/dt and di/dt capability
應用
Power Management, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
56A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
20V
Power Dissipation
140W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
75V
Drain Source On State Resistance
7340µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00064